Microsemi Corp. IGBT Modules APTGT50H60T1G

The APTGT50H60T1G is a full-bridge power module containing Trench + Field Stop IGBT3 devices and parallel diodes, designed for high-frequency applications such as welding converters, switched-mode power supplies, and motor control. It is rated for 600 V collector-emitter voltage and 50 A continuous collector current at 80°C case temperature, with a peak pulsed current of 100 A. The module features a low thermal resistance of 0.85°C/W for the IGBT and 1.42°C/W for the diode, and supports direct mounting to a heatsink with an isolated package. It includes an internal NTC thermistor with 50 kΩ resistance at 25°C and a 3952 K B-value for temperature monitoring. The package is RoHS compliant, has a maximum isolation voltage of 4000 V RMS, and supports switching up to 20 kHz with symmetrical low-stray-inductance design. Its operating junction temperature range is -40°C to 175°C.