Microsemi Corp. IGBT Modules APTGT100BB60T3G

Description
IGBT Modules DOR CC3152
Description
IGBT Modules DOR CC3152
Datasheet
Datasheet Summary
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The APTGT100BB60T3G is a power module integrating a trench + field stop IGBT3 and parallel diode for use in welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It is packaged in a SP3F module with direct mounting to heatsink, weighing 110 g. The IGBT supports a collector-emitter voltage of 600 V and continuous collector current of 100 A at 80°C case temperature. It features a junction-to-case thermal resistance of 0.44°C/W for the IGBT and 0.77°C/W for the diode, a 4000 V RMS isolation voltage, and operates with a junction temperature range of -40°C to 175°C. The module includes an integrated NTC thermistor with 22 kΩ resistance at 25°C, a Kelvin emitter for simplified driving, and is RoHS compliant.

Datasheet Summary
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The APTGT100BB60T3G is a power module integrating a trench + field stop IGBT3 and parallel diode for use in welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It is packaged in a SP3F module with direct mounting to heatsink, weighing 110 g. The IGBT supports a collector-emitter voltage of 600 V and continuous collector current of 100 A at 80°C case temperature. It features a junction-to-case thermal resistance of 0.44°C/W for the IGBT and 0.77°C/W for the diode, a 4000 V RMS isolation voltage, and operates with a junction temperature range of -40°C to 175°C. The module includes an integrated NTC thermistor with 22 kΩ resistance at 25°C, a Kelvin emitter for simplified driving, and is RoHS compliant.

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Sheung Wan, Hong Kong
IGBT Modules
APTGT100BB60T3G
IGBT Modules APTGT100BB60T3G
IGBT Modules DOR CC3152

IGBT Modules DOR CC3152

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGT100BB60T3G
Product Name IGBT Modules
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