Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N60L2C3 APT94N60L2C3

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199264-APT94N60L2C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 833W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 94A (Tc) Gate-Source Threshold Voltage: 3.9V @ 5.4mA Max Gate Charge: 640nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199264-APT94N60L2C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 833W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 94A (Tc) Gate-Source Threshold Voltage: 3.9V @ 5.4mA Max Gate Charge: 640nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N60L2C3 - 199264-APT94N60L2C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N60L2C3
199264-APT94N60L2C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N60L2C3 199264-APT94N60L2C3
Manufacturer: Microsemi Corporation Win Source Part Number: 199264-APT94N60L2C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 833W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 94A (Tc) Gate-Source Threshold Voltage: 3.9V @ 5.4mA Max Gate Charge: 640nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 199264-APT94N60L2C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 833W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 264 MAX [L2]
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 94A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 5.4mA
Max Gate Charge: 640nC @ 10V
Max Input Capacitance: 13600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 94A 600V 0.035ohm MOSFET Transistor
285-APT94N60L2C3
N-Channel 94A 600V 0.035ohm MOSFET Transistor 285-APT94N60L2C3
Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Product overview: APT94N60L2C3 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 600V, 0.035ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 600V, 0.035ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-APT94N60L2C3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Product overview: APT94N60L2C3 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 600V, 0.035ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 600V, 0.035ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-APT94N60L2C3 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 199264-APT94N60L2C3 285-APT94N60L2C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N60L2C3 N-Channel 94A 600V 0.035ohm MOSFET Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 833000 milliwatts
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