Microsemi Corp. IGBTs - Single - APT80GA90LD40 APT80GA90LD40

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146908-APT80GA90LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Package: TO-264-3, TO-264AA Power - Max: 625W Reverse Recovery Time (trr): 25ns IGBT Type: PT Current - Collector Pulsed (Icm): 239A Switching Energy: 1652μJ (on), 1389μJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7 Ohm, 15V Family Name: APT80GA90LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Current - Collector (Ic) (Maximum): 145A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 47A Introduction Date: May 22, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146908-APT80GA90LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Package: TO-264-3, TO-264AA Power - Max: 625W Reverse Recovery Time (trr): 25ns IGBT Type: PT Current - Collector Pulsed (Icm): 239A Switching Energy: 1652μJ (on), 1389μJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7 Ohm, 15V Family Name: APT80GA90LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Current - Collector (Ic) (Maximum): 145A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 47A Introduction Date: May 22, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Suppliers

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IGBTs - Single - APT80GA90LD40 - 1146908-APT80GA90LD40 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT80GA90LD40
1146908-APT80GA90LD40
IGBTs - Single - APT80GA90LD40 1146908-APT80GA90LD40
Manufacturer: Microsemi Corporation Win Source Part Number: 1146908-APT80GA90LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Package: TO-264-3, TO-264AA Power - Max: 625W Reverse Recovery Time (trr): 25ns IGBT Type: PT Current - Collector Pulsed (Icm): 239A Switching Energy: 1652μJ (on), 1389μJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7 Ohm, 15V Family Name: APT80GA90LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Current - Collector (Ic) (Maximum): 145A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 47A Introduction Date: May 22, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146908-APT80GA90LD40
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Package: TO-264-3, TO-264AA
Power - Max: 625W
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Current - Collector Pulsed (Icm): 239A
Switching Energy: 1652μJ (on), 1389μJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 18ns/149ns
Test Condition: 600V, 47A, 4.7 Ohm, 15V
Family Name: APT80GA90LD40
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264
Current - Collector (Ic) (Maximum): 145A
Voltage - Collector Emitter Breakdown (Maximum): 900V
Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 47A
Introduction Date: May 22, 2008
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1146908-APT80GA90LD40 APT80GA90LD40
Product Name IGBTs - Single - APT80GA90LD40 IGBT Transistors
VCES 900 volts
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