Microsemi Corp. IGBTs - Single - APT80GA90B APT80GA90B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051487-APT80GA90B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 145A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 625W Pulsed Collector Current: 239A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 47A Total Switching Energy(Ets): 1652μJ (on), 1389μJ (off) Turn-on and Turn-off delay time: 18ns/149ns Testing Conditions: 600V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051487-APT80GA90B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 145A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 625W Pulsed Collector Current: 239A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 47A Total Switching Energy(Ets): 1652μJ (on), 1389μJ (off) Turn-on and Turn-off delay time: 18ns/149ns Testing Conditions: 600V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 1
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IGBTs - Single - APT80GA90B - 051487-APT80GA90B - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT80GA90B
051487-APT80GA90B
IGBTs - Single - APT80GA90B 051487-APT80GA90B
Manufacturer: Microsemi Corporation Win Source Part Number: 051487-APT80GA90B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 145A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 625W Pulsed Collector Current: 239A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 47A Total Switching Energy(Ets): 1652μJ (on), 1389μJ (off) Turn-on and Turn-off delay time: 18ns/149ns Testing Conditions: 600V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051487-APT80GA90B
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 200nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 145A
VCEO Maximum Collector-Emitter Breakdown Voltage: 900V
Maximum Power Dissipation: 625W
Pulsed Collector Current: 239A
Collector-emitter saturation voltage(Max): 3.1V @ 15V, 47A
Total Switching Energy(Ets): 1652μJ (on), 1389μJ (off)
Turn-on and Turn-off delay time: 18ns/149ns
Testing Conditions: 600V, 47A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051487-APT80GA90B APT80GA90B
Product Name IGBTs - Single - APT80GA90B IGBT Transistors
VCE(on) 3.1 volts
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