Microsemi Corp. IGBTs - Single - APT80GA60B APT80GA60B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051486-APT80GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 230nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 143A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 47A Total Switching Energy(Ets): 840μJ (on), 751μJ (off) Turn-on and Turn-off delay time: 23ns/158ns Testing Conditions: 400V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051486-APT80GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 230nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 143A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 47A Total Switching Energy(Ets): 840μJ (on), 751μJ (off) Turn-on and Turn-off delay time: 23ns/158ns Testing Conditions: 400V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Suppliers

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IGBTs - Single - APT80GA60B - 051486-APT80GA60B - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT80GA60B
051486-APT80GA60B
IGBTs - Single - APT80GA60B 051486-APT80GA60B
Manufacturer: Microsemi Corporation Win Source Part Number: 051486-APT80GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 230nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 143A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 47A Total Switching Energy(Ets): 840μJ (on), 751μJ (off) Turn-on and Turn-off delay time: 23ns/158ns Testing Conditions: 400V, 47A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051486-APT80GA60B
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 230nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 143A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 625W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 47A
Total Switching Energy(Ets): 840μJ (on), 751μJ (off)
Turn-on and Turn-off delay time: 23ns/158ns
Testing Conditions: 400V, 47A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
IGBT Transistors
APT80GA60B
IGBT Transistors APT80GA60B
IGBT Transistors FG, IGBT, 600V, TO-247

IGBT Transistors FG, IGBT, 600V, TO-247

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051486-APT80GA60B APT80GA60B
Product Name IGBTs - Single - APT80GA60B IGBT Transistors
VCE(on) 2.5 volts
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