Microsemi Corp. IGBT Transistors APT75GT120JRDQ3

Description
IGBT Transistors FG, IGBT-COMBI,1200V, 75A, SOT-227
Description
IGBT Transistors FG, IGBT-COMBI,1200V, 75A, SOT-227
Datasheet
Datasheet Summary
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The APT75GT120JRDQ3 is a 1200V IGBT transistor designed for high-frequency switching up to 20 kHz, featuring low forward voltage drop and ultrafast switching with low tail current. It is packaged in an ISOTOP® case with a weight of 29.2 grams and has a maximum collector current of 97 A at 25°C and 42 A at 110°C. The device supports a pulsed collector current of 225 A and a total power dissipation of 480 W. Its junction temperature range is -55°C to 150°C, with an isolation voltage of 2500 V RMS. The IGBT has a typical collector-emitter on voltage of 3.2 V at 75 A and 25°C, and a gate threshold voltage of 5.5 V. It is UL recognized and rated for RBSOA and SCSOA operation.

Datasheet Summary
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The APT75GT120JRDQ3 is a 1200V IGBT transistor designed for high-frequency switching up to 20 kHz, featuring low forward voltage drop and ultrafast switching with low tail current. It is packaged in an ISOTOP® case with a weight of 29.2 grams and has a maximum collector current of 97 A at 25°C and 42 A at 110°C. The device supports a pulsed collector current of 225 A and a total power dissipation of 480 W. Its junction temperature range is -55°C to 150°C, with an isolation voltage of 2500 V RMS. The IGBT has a typical collector-emitter on voltage of 3.2 V at 75 A and 25°C, and a gate threshold voltage of 5.5 V. It is UL recognized and rated for RBSOA and SCSOA operation.

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Sheung Wan, Hong Kong
IGBT Transistors
APT75GT120JRDQ3
IGBT Transistors APT75GT120JRDQ3
IGBT Transistors FG, IGBT-COMBI,1200V, 75A, SOT-227

IGBT Transistors FG, IGBT-COMBI,1200V, 75A, SOT-227

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APT75GT120JRDQ3
Product Name IGBT Transistors
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