Microsemi Corp. IGBTs - Single - APT75GP120B2G APT75GP120B2G

Manufacturer: Microsemi Corporation Win Source Part Number: 1146894-APT75GP120B2 G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Power - Max: 1042W IGBT Type: PT Current - Collector Pulsed (Icm): 300A Switching Energy: 1620μJ (on), 2500μJ (off) Input Type: Standard Gate Charge: 320nC Td (on/off) @ 25°C: 20ns/163ns Test Condition: 600V, 75A, 5 Ohm, 15V Family Name: APT75GP120B2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Current - Collector (Ic) (Maximum): 100A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 3.9V @ 15V, 75A Alternative Parts (Cross-Reference): IXYH40N120B3; STGW40H120DF2; STGWA40H120DF2; Introduction Date: September 03, 1997 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1