Manufacturer: Microsemi Corporation
Win Source Part Number: 1018115-APT75GN60LDQ
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 485nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-264 [L]
Maximum Current Collector: 155A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 536W
Pulsed Collector Current: 225A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 75A
Total Switching Energy(Ets): 2500μJ (on), 2140μJ (off)
Turn-on and Turn-off delay time: 47ns/385ns
Testing Conditions: 400V, 75A, 1 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 1
IGBT Transistors FG, IGBT, 600V, TO-264, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1018115-APT75GN60LDQ3G | APT75GN60LDQ3G |
| Product Name | IGBTs - Single - APT75GN60LDQ3G | IGBT Transistors |
| VCE(on) | 1.85 volts |
