Microsemi Corp. IGBTs - Single - APT75GN60BG APT75GN60BG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768715-APT75GN60BG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 536W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 225A Switching Energy: 2500μJ (on), 2140μJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1 Ohm, 15V Family Name: APT75GN60B Categories: Discrete Semiconductor Products Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 155A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 1.85V @ 15V, 75A Introduction Date: September 03, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768715-APT75GN60BG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 536W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 225A Switching Energy: 2500μJ (on), 2140μJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1 Ohm, 15V Family Name: APT75GN60B Categories: Discrete Semiconductor Products Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 155A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 1.85V @ 15V, 75A Introduction Date: September 03, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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IGBTs - Single - APT75GN60BG - 768715-APT75GN60BG - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT75GN60BG
768715-APT75GN60BG
IGBTs - Single - APT75GN60BG 768715-APT75GN60BG
Manufacturer: Microsemi Corporation Win Source Part Number: 768715-APT75GN60BG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 536W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 225A Switching Energy: 2500μJ (on), 2140μJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1 Ohm, 15V Family Name: APT75GN60B Categories: Discrete Semiconductor Products Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 155A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 1.85V @ 15V, 75A Introduction Date: September 03, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768715-APT75GN60BG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 536W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 2500μJ (on), 2140μJ (off)
Input Type: Standard
Gate Charge: 485nC
Td (on/off) @ 25°C: 47ns/385ns
Test Condition: 400V, 75A, 1 Ohm, 15V
Family Name: APT75GN60B
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247 [B]
Current - Collector (Ic) (Maximum): 155A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 1.85V @ 15V, 75A
Introduction Date: September 03, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 768715-APT75GN60BG APT75GN60BG
Product Name IGBTs - Single - APT75GN60BG IGBT Transistors
VCES 600 volts
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