Microsemi Corp. Transistor APT75GN120LG

Description
IGBT 200A 1200V T0-264. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
IGBT 200A 1200V T0-264. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 74437439 - Radwell International
Willingboro, NJ, United States
Transistor
74437439
Transistor 74437439
IGBT 200A 1200V T0-264. FREE 2 YEAR RADWELL WARRANTY

IGBT 200A 1200V T0-264. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
IGBTs - Single - APT75GN120LG - 768714-APT75GN120LG - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT75GN120LG
768714-APT75GN120LG
IGBTs - Single - APT75GN120LG 768714-APT75GN120LG
Manufacturer: Microsemi Corporation Win Source Part Number: 768714-APT75GN120LG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 833W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 225A Switching Energy: 8620μJ (on), 11400μJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 60ns/620ns Test Condition: 800V, 75A, 1 Ohm, 15V Family Name: APT75GN120L Categories: Discrete Semiconductor Products Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 200A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 75A Alternative Parts (Cross-Reference): APT75GN120L; Introduction Date: September 10, 1996 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768714-APT75GN120LG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Power - Max: 833W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 8620μJ (on), 11400μJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 60ns/620ns
Test Condition: 800V, 75A, 1 Ohm, 15V
Family Name: APT75GN120L
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-264 [L]
Current - Collector (Ic) (Maximum): 200A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 75A
Alternative Parts (Cross-Reference): APT75GN120L;
Introduction Date: September 10, 1996
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
APT75GN120LG
IGBT Transistors APT75GN120LG
IGBT Transistors FG, IGBT, 1200V, TO-264, RoHS

IGBT Transistors FG, IGBT, 1200V, TO-264, RoHS

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Technical Specifications

  Radwell International Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 74437439 768714-APT75GN120LG APT75GN120LG
Product Name Transistor IGBTs - Single - APT75GN120LG IGBT Transistors
VCES 1200 volts
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