Manufacturer: Microsemi Corporation
Win Source Part Number: 768713-APT75GN120B2G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Power - Max: 833W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 8045μJ (on), 7640μJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 60ns/620ns
Test Condition: 800V, 75A, 1 Ohm, 15V
Family Name: APT75GN120B2
Categories: Discrete Semiconductor Products
Current - Collector (Ic) (Maximum): 200A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 75A
Alternative Parts (Cross-Reference): IRG7PSH73K10PbF; APT75GN120B2;
Introduction Date: September 10, 1996
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1
IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 768713-APT75GN120B2G | APT75GN120B2G |
| Product Name | IGBTs - Single - APT75GN120B2G | IGBT Transistors |
| VCES | 1200 volts |
