Microsemi Corp. IGBTs - Single - APT68GA60LD40 APT68GA60LD40

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146886-APT68GA60LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 520W Reverse Recovery Time (trr): 22ns IGBT Type: PT Current - Collector Pulsed (Icm): 202A Switching Energy: 715μJ (on), 607μJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT68GA60LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 121A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 40A Alternative Parts (Cross-Reference): RJH60D7DPM-00#T1; RJH60D7DPM-00-T1; RJH60F7DPQ-A0-T0; Introduction Date: October 15, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146886-APT68GA60LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 520W Reverse Recovery Time (trr): 22ns IGBT Type: PT Current - Collector Pulsed (Icm): 202A Switching Energy: 715μJ (on), 607μJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT68GA60LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 121A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 40A Alternative Parts (Cross-Reference): RJH60D7DPM-00#T1; RJH60D7DPM-00-T1; RJH60F7DPQ-A0-T0; Introduction Date: October 15, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - APT68GA60LD40 - 1146886-APT68GA60LD40 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT68GA60LD40
1146886-APT68GA60LD40
IGBTs - Single - APT68GA60LD40 1146886-APT68GA60LD40
Manufacturer: Microsemi Corporation Win Source Part Number: 1146886-APT68GA60LD4 0 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 520W Reverse Recovery Time (trr): 22ns IGBT Type: PT Current - Collector Pulsed (Icm): 202A Switching Energy: 715μJ (on), 607μJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT68GA60LD40 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 121A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 40A Alternative Parts (Cross-Reference): RJH60D7DPM-00#T1; RJH60D7DPM-00-T1; RJH60F7DPQ-A0-T0; Introduction Date: October 15, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146886-APT68GA60LD40
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Power - Max: 520W
Reverse Recovery Time (trr): 22ns
IGBT Type: PT
Current - Collector Pulsed (Icm): 202A
Switching Energy: 715μJ (on), 607μJ (off)
Input Type: Standard
Gate Charge: 198nC
Td (on/off) @ 25°C: 21ns/133ns
Test Condition: 400V, 40A, 4.7 Ohm, 15V
Family Name: APT68GA60LD40
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264 [L]
Current - Collector (Ic) (Maximum): 121A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 40A
Alternative Parts (Cross-Reference): RJH60D7DPM-00#T1; RJH60D7DPM-00-T1; RJH60F7DPQ-A0-T0;
Introduction Date: October 15, 2008
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
APT68GA60LD40
IGBT Transistors APT68GA60LD40
IGBT Transistors FG, IGBT-COMBI, 600V, TO-264

IGBT Transistors FG, IGBT-COMBI, 600V, TO-264

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1146886-APT68GA60LD40 APT68GA60LD40
Product Name IGBTs - Single - APT68GA60LD40 IGBT Transistors
VCES 600 volts
Unlock Full Specs
to access all available technical data