Microsemi Corp. IGBTs - Single - APT68GA60B APT68GA60B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051482-APT68GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 298nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 121A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 520W Pulsed Collector Current: 202A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 715μJ (on), 607μJ (off) Turn-on and Turn-off delay time: 21ns/133ns Testing Conditions: 400V, 40A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051482-APT68GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 298nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 121A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 520W Pulsed Collector Current: 202A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 715μJ (on), 607μJ (off) Turn-on and Turn-off delay time: 21ns/133ns Testing Conditions: 400V, 40A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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IGBTs - Single - APT68GA60B - 051482-APT68GA60B - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT68GA60B
051482-APT68GA60B
IGBTs - Single - APT68GA60B 051482-APT68GA60B
Manufacturer: Microsemi Corporation Win Source Part Number: 051482-APT68GA60B Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 298nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 121A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 520W Pulsed Collector Current: 202A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 715μJ (on), 607μJ (off) Turn-on and Turn-off delay time: 21ns/133ns Testing Conditions: 400V, 40A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051482-APT68GA60B
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 298nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 121A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 520W
Pulsed Collector Current: 202A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A
Total Switching Energy(Ets): 715μJ (on), 607μJ (off)
Turn-on and Turn-off delay time: 21ns/133ns
Testing Conditions: 400V, 40A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
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APT68GA60B
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051482-APT68GA60B APT68GA60B
Product Name IGBTs - Single - APT68GA60B IGBT Transistors
VCE(on) 2.5 volts
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