Microsemi Corp. IGBTs - Single - APT65GP60B2G APT65GP60B2G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 813729-APT65GP60B2G Packaging: Tube Mounting Style: Through Hole Power - Max: 833W IGBT Type: PT Current - Collector Pulsed (Icm): 250A Switching Energy: 605μJ (on), 896μJ (off) Input Type: Standard Gate Charge: 210nC Test Condition: 400V, 65A, 5Ohm, 15V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Variant Current - Collector (Ic) (Maximum): 100A Voltage - Collector Emitter Breakdown (Maximum): 600V Popularity: Low Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 65A Td (on/off) at 25°C: 30ns/91ns
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 813729-APT65GP60B2G Packaging: Tube Mounting Style: Through Hole Power - Max: 833W IGBT Type: PT Current - Collector Pulsed (Icm): 250A Switching Energy: 605μJ (on), 896μJ (off) Input Type: Standard Gate Charge: 210nC Test Condition: 400V, 65A, 5Ohm, 15V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Variant Current - Collector (Ic) (Maximum): 100A Voltage - Collector Emitter Breakdown (Maximum): 600V Popularity: Low Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 65A Td (on/off) at 25°C: 30ns/91ns
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IGBTs - Single - APT65GP60B2G - 813729-APT65GP60B2G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT65GP60B2G
813729-APT65GP60B2G
IGBTs - Single - APT65GP60B2G 813729-APT65GP60B2G
Manufacturer: Microsemi Corporation Win Source Part Number: 813729-APT65GP60B2G Packaging: Tube Mounting Style: Through Hole Power - Max: 833W IGBT Type: PT Current - Collector Pulsed (Icm): 250A Switching Energy: 605μJ (on), 896μJ (off) Input Type: Standard Gate Charge: 210nC Test Condition: 400V, 65A, 5Ohm, 15V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Variant Current - Collector (Ic) (Maximum): 100A Voltage - Collector Emitter Breakdown (Maximum): 600V Popularity: Low Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 65A Td (on/off) at 25°C: 30ns/91ns

Manufacturer: Microsemi Corporation
Win Source Part Number: 813729-APT65GP60B2G
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 833W
IGBT Type: PT
Current - Collector Pulsed (Icm): 250A
Switching Energy: 605μJ (on), 896μJ (off)
Input Type: Standard
Gate Charge: 210nC
Test Condition: 400V, 65A, 5Ohm, 15V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3 Variant
Current - Collector (Ic) (Maximum): 100A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Low
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 65A
Td (on/off) at 25°C: 30ns/91ns

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Sheung Wan, Hong Kong
IGBT Transistors
APT65GP60B2G
IGBT Transistors APT65GP60B2G
IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHS

IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHS

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 813729-APT65GP60B2G APT65GP60B2G
Product Name IGBTs - Single - APT65GP60B2G IGBT Transistors
VCES 600 volts
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