Microsemi Corp. IGBTs - Single - APT64GA90B2D30 APT64GA90B2D30

Manufacturer: Microsemi Corporation Win Source Part Number: 1146881-APT64GA90B2D 30 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Power - Max: 500W IGBT Type: PT Current - Collector Pulsed (Icm): 193A Switching Energy: 1192μJ (on), 1088μJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7 Ohm, 15V Family Name: APT64GA90B2D30 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Current - Collector (Ic) (Maximum): 117A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 38A Introduction Date: May 20, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Quantity per package: 1