Microsemi Corp. IGBTs - Single - APT64GA90B APT64GA90B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146880-APT64GA90B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 500W IGBT Type: PT Current - Collector Pulsed (Icm): 193A Switching Energy: 1857μJ (on), 2311μJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7 Ohm, 15V Family Name: APT64GA90B Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 117A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 38A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146880-APT64GA90B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 500W IGBT Type: PT Current - Collector Pulsed (Icm): 193A Switching Energy: 1857μJ (on), 2311μJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7 Ohm, 15V Family Name: APT64GA90B Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 117A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 38A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Suppliers

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IGBTs - Single - APT64GA90B - 1146880-APT64GA90B - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT64GA90B
1146880-APT64GA90B
IGBTs - Single - APT64GA90B 1146880-APT64GA90B
Manufacturer: Microsemi Corporation Win Source Part Number: 1146880-APT64GA90B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 500W IGBT Type: PT Current - Collector Pulsed (Icm): 193A Switching Energy: 1857μJ (on), 2311μJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7 Ohm, 15V Family Name: APT64GA90B Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 117A Voltage - Collector Emitter Breakdown (Maximum): 900V Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 38A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146880-APT64GA90B
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Power - Max: 500W
IGBT Type: PT
Current - Collector Pulsed (Icm): 193A
Switching Energy: 1857μJ (on), 2311μJ (off)
Input Type: Standard
Gate Charge: 162nC
Td (on/off) @ 25°C: 18ns/131ns
Test Condition: 600V, 38A, 4.7 Ohm, 15V
Family Name: APT64GA90B
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Current - Collector (Ic) (Maximum): 117A
Voltage - Collector Emitter Breakdown (Maximum): 900V
Vce(on) (Maximum) @ Vge, Ic: 3.1V @ 15V, 38A
Introduction Date: April 30, 2008
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 1146880-APT64GA90B
Product Name IGBTs - Single - APT64GA90B
VCES 900 volts
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