Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M60B2 APT56M60B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768705-APT56M60B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Family Name: APT56M60B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 28A, 10V Alternative Parts (Cross-Reference): IXKR40N60C; R6520ENZ1C9; R6524ENZ1C9; IPW60R075CPA; Introduction Date: October 04, 2006 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768705-APT56M60B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Family Name: APT56M60B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 28A, 10V Alternative Parts (Cross-Reference): IXKR40N60C; R6520ENZ1C9; R6524ENZ1C9; IPW60R075CPA; Introduction Date: October 04, 2006 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M60B2 - 768705-APT56M60B2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M60B2
768705-APT56M60B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M60B2 768705-APT56M60B2
Manufacturer: Microsemi Corporation Win Source Part Number: 768705-APT56M60B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Family Name: APT56M60B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 28A, 10V Alternative Parts (Cross-Reference): IXKR40N60C; R6520ENZ1C9; R6524ENZ1C9; IPW60R075CPA; Introduction Date: October 04, 2006 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 768705-APT56M60B2
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Family Name: APT56M60B2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247 [B]
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1040W (Tc)
Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): IXKR40N60C; R6520ENZ1C9; R6524ENZ1C9; IPW60R075CPA;
Introduction Date: October 04, 2006
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 600V, TO-247 T-MAX

MOSFET FG, MOSFET, 600V, TO-247 T-MAX

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768705-APT56M60B2 APT56M60B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M60B2 MOSFET
PD 1.04E6 milliwatts
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