Microsemi Corp. IGBTs - Single - APT50GS60BRDQ2G APT50GS60BRDQ2G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146822-APT50GS60BRD Q2G Series: Thunderbolt IGBT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 415W Reverse Recovery Time (trr): 25ns IGBT Type: NPT Current - Collector Pulsed (Icm): 195A Switching Energy: 755μJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT50GS60BRDQ2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 93A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 3.15V @ 15V, 50A Alternative Parts (Cross-Reference): RJH60D7DPM-00-T1; RJH60D6DPQ-E0#T2; RJH60D6DPM-00-T1; Introduction Date: July 15, 2007 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146822-APT50GS60BRD Q2G Series: Thunderbolt IGBT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 415W Reverse Recovery Time (trr): 25ns IGBT Type: NPT Current - Collector Pulsed (Icm): 195A Switching Energy: 755μJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT50GS60BRDQ2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 93A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 3.15V @ 15V, 50A Alternative Parts (Cross-Reference): RJH60D7DPM-00-T1; RJH60D6DPQ-E0#T2; RJH60D6DPM-00-T1; Introduction Date: July 15, 2007 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
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IGBTs - Single - APT50GS60BRDQ2G - 1146822-APT50GS60BRDQ2G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT50GS60BRDQ2G
1146822-APT50GS60BRDQ2G
IGBTs - Single - APT50GS60BRDQ2G 1146822-APT50GS60BRDQ2G
Manufacturer: Microsemi Corporation Win Source Part Number: 1146822-APT50GS60BRD Q2G Series: Thunderbolt IGBT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Power - Max: 415W Reverse Recovery Time (trr): 25ns IGBT Type: NPT Current - Collector Pulsed (Icm): 195A Switching Energy: 755μJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Family Name: APT50GS60BRDQ2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Current - Collector (Ic) (Maximum): 93A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 3.15V @ 15V, 50A Alternative Parts (Cross-Reference): RJH60D7DPM-00-T1; RJH60D6DPQ-E0#T2; RJH60D6DPM-00-T1; Introduction Date: July 15, 2007 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146822-APT50GS60BRDQ2G
Series: Thunderbolt IGBT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Power - Max: 415W
Reverse Recovery Time (trr): 25ns
IGBT Type: NPT
Current - Collector Pulsed (Icm): 195A
Switching Energy: 755μJ (off)
Input Type: Standard
Gate Charge: 235nC
Td (on/off) @ 25°C: 16ns/225ns
Test Condition: 400V, 40A, 4.7 Ohm, 15V
Family Name: APT50GS60BRDQ2
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Current - Collector (Ic) (Maximum): 93A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 3.15V @ 15V, 50A
Alternative Parts (Cross-Reference): RJH60D7DPM-00-T1; RJH60D6DPQ-E0#T2; RJH60D6DPM-00-T1;
Introduction Date: July 15, 2007
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1146822-APT50GS60BRDQ2G APT50GS60BRDQ2G
Product Name IGBTs - Single - APT50GS60BRDQ2G IGBT Transistors
VCES 600 volts
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