Microsemi Corp. IGBTs - Single - APT50GP60B2DQ2 APT50GP60B2DQ2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051472-APT50GP60B2DQ 2 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 190A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 50A Total Switching Energy(Ets): 465μJ (on), 635μJ (off) Turn-on and Turn-off delay time: 19ns/85ns Testing Conditions: 400V, 50A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
  • IGBTs - Single - APT50GP60B2DQ2 - 051472-APT50GP60B2DQ2 - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051472-APT50GP60B2DQ 2 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 190A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 50A Total Switching Energy(Ets): 465μJ (on), 635μJ (off) Turn-on and Turn-off delay time: 19ns/85ns Testing Conditions: 400V, 50A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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IGBTs - Single - APT50GP60B2DQ2 - 051472-APT50GP60B2DQ2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT50GP60B2DQ2
051472-APT50GP60B2DQ2
IGBTs - Single - APT50GP60B2DQ2 051472-APT50GP60B2DQ2
Manufacturer: Microsemi Corporation Win Source Part Number: 051472-APT50GP60B2DQ 2 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 190A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 50A Total Switching Energy(Ets): 465μJ (on), 635μJ (off) Turn-on and Turn-off delay time: 19ns/85ns Testing Conditions: 400V, 50A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051472-APT50GP60B2DQ2
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 165nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-247-3 Variant
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 625W
Pulsed Collector Current: 190A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 50A
Total Switching Energy(Ets): 465μJ (on), 635μJ (off)
Turn-on and Turn-off delay time: 19ns/85ns
Testing Conditions: 400V, 50A, 4.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 051472-APT50GP60B2DQ2
Product Name IGBTs - Single - APT50GP60B2DQ2
VCE(on) 2.7 volts
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