Manufacturer: Microsemi Corporation
Win Source Part Number: 1018070-APT50GN60BDQ
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 325nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 107A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 366W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 50A
Total Switching Energy(Ets): 1185μJ (on), 1565μJ (off)
Turn-on and Turn-off delay time: 20ns/230ns
Testing Conditions: 400V, 50A, 4.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 1
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1018070-APT50GN60BDQ2G | APT50GN60BDQ2G |
| Product Name | IGBTs - Single - APT50GN60BDQ2G | IGBT Transistors |
| VCE(on) | 1.85 volts |
