Manufacturer: Microsemi Corporation
Win Source Part Number: 768701-APT50GN120B2G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Power - Max: 543W
IGBT Type: NPT, Trench Field Stop
Current - Collector Pulsed (Icm): 150A
Switching Energy: 4495μJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 28ns/320ns
Test Condition: 800V, 50A, 2.2 Ohm, 15V
Family Name: APT50GN120B2
Categories: Discrete Semiconductor Products
Current - Collector (Ic) (Maximum): 134A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 50A
Alternative Parts (Cross-Reference): IRG7PH50UPbF; IRG7PH50U-EP; IRG7PH46U-EP; RJP1CS05DWT-80#X0;
Introduction Date: September 03, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 768701-APT50GN120B2G | APT50GN120B2G |
| Product Name | IGBTs - Single - APT50GN120B2G | IGBT Transistors |
| VCES | 1200 volts |
