Microsemi Corp. IGBTs - Single - APT50GF120B2R APT50GF120B2R

Manufacturer: Microsemi Corporation
Win Source Part Number: 051471-APT50GF120B2R
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 340nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-247-3 Variant
Maximum Current Collector: 135A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 781W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 3V @ 15V, 50A
Total Switching Energy(Ets): 3.6mJ (on), 2.64mJ (off)
Turn-on and Turn-off delay time: 25ns/260ns
Testing Conditions: 800V, 50A, 1 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

IGBT 1200V 135A 781W TMAX Product overview: APT50GF120B2R from Microsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 135A, 781W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 135A, 781W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GF120B2R can be used for catalog matching and distributor lookup.