Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG APT5010B2LLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG - 768697-APT5010B2LLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG
768697-APT5010B2LLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG 768697-APT5010B2LLG
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768697-APT5010B2LLG
Series: POWER MOS 7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Family Name: APT5010B2LL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 520W (Tc)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V
Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L;
Introduction Date: March 01, 2001
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768697-APT5010B2LLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG
PD 520000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 1727-7668-2-ND - DigiKey
Specs
Polarity P-Channel
Package Type SC-100, SOT-669
Transistor Grade / Operating Range Automotive
View Details
3 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810023SCLI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M2H - AIMDQ75R060M2H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details