Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG APT5010B2LLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG - 768697-APT5010B2LLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG
768697-APT5010B2LLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG 768697-APT5010B2LLG
Manufacturer: Microsemi Corporation Win Source Part Number: 768697-APT5010B2LLG Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: APT5010B2LL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L; Introduction Date: March 01, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768697-APT5010B2LLG
Series: POWER MOS 7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Family Name: APT5010B2LL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4360pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 520W (Tc)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 23A, 10V
Alternative Parts (Cross-Reference): SiHFPS40N50L; IRFPS40N50LPBF; SiHFPS40N50L-E3; IRFPS40N50L;
Introduction Date: March 01, 2001
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768697-APT5010B2LLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5010B2LLG
PD 520000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

CSD16413Q5A N-Channel NexFET™ Power MOSFET - CSD16413Q5A - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 25 volts
rDS(on) 0.0056 ohms
View Details
7 suppliers
40V 35A MOSFET Transistor - 278-AUIRF7738L2TR - ERSAELECTRONICS PTE. LTD.
Specs
PD 3300 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tape & Reel (TR)
View Details
5 suppliers
MOSFETs - 1219600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23
View Details
60 V, N-channel Trench MOSFET - BSS138AKW-QX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 220000 milliamps
View Details
2 suppliers