Microsemi Corp. IGBTs - Single - APT44GA60BD30C APT44GA60BD30C

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051468-APT44GA60BD30 C Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 128nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-247 [B] Maximum Current Collector: 78A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 337W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.6V @ 15V, 26A Total Switching Energy(Ets): 409μJ (on), 450μJ (off) Turn-on and Turn-off delay time: 16ns/102ns Testing Conditions: 400V, 26A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051468-APT44GA60BD30 C Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 128nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-247 [B] Maximum Current Collector: 78A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 337W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.6V @ 15V, 26A Total Switching Energy(Ets): 409μJ (on), 450μJ (off) Turn-on and Turn-off delay time: 16ns/102ns Testing Conditions: 400V, 26A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
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Suppliers

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IGBTs - Single - APT44GA60BD30C - 051468-APT44GA60BD30C - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT44GA60BD30C
051468-APT44GA60BD30C
IGBTs - Single - APT44GA60BD30C 051468-APT44GA60BD30C
Manufacturer: Microsemi Corporation Win Source Part Number: 051468-APT44GA60BD30 C Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 128nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-247 [B] Maximum Current Collector: 78A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 337W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.6V @ 15V, 26A Total Switching Energy(Ets): 409μJ (on), 450μJ (off) Turn-on and Turn-off delay time: 16ns/102ns Testing Conditions: 400V, 26A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 051468-APT44GA60BD30C
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 128nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-247 [B]
Maximum Current Collector: 78A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 337W
Pulsed Collector Current: 130A
Collector-emitter saturation voltage(Max): 1.6V @ 15V, 26A
Total Switching Energy(Ets): 409μJ (on), 450μJ (off)
Turn-on and Turn-off delay time: 16ns/102ns
Testing Conditions: 400V, 26A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT44GA60BD30C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT44GA60BD30C
Discrete Semiconductor Products - Transistors - IGBTs APT44GA60BD30C
IGBT 600V 78A 337W TO247

IGBT 600V 78A 337W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051468-APT44GA60BD30C APT44GA60BD30C
Product Name IGBTs - Single - APT44GA60BD30C Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.6 volts
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