Microsemi Corp. IGBTs - Single - APT35GP120B2DQ2G APT35GP120B2DQ2G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051462-APT35GP120B2D Q2G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 150nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 96A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 543W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 35A Total Switching Energy(Ets): 750μJ (on), 680μJ (off) Turn-on and Turn-off delay time: 16ns/95ns Testing Conditions: 600V, 35A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051462-APT35GP120B2D Q2G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 150nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 96A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 543W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 35A Total Switching Energy(Ets): 750μJ (on), 680μJ (off) Turn-on and Turn-off delay time: 16ns/95ns Testing Conditions: 600V, 35A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - APT35GP120B2DQ2G - 051462-APT35GP120B2DQ2G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT35GP120B2DQ2G
051462-APT35GP120B2DQ2G
IGBTs - Single - APT35GP120B2DQ2G 051462-APT35GP120B2DQ2G
Manufacturer: Microsemi Corporation Win Source Part Number: 051462-APT35GP120B2D Q2G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 150nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-247-3 Variant Maximum Current Collector: 96A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 543W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 35A Total Switching Energy(Ets): 750μJ (on), 680μJ (off) Turn-on and Turn-off delay time: 16ns/95ns Testing Conditions: 600V, 35A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051462-APT35GP120B2DQ2G
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 150nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-247-3 Variant
Maximum Current Collector: 96A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 543W
Pulsed Collector Current: 140A
Collector-emitter saturation voltage(Max): 3.9V @ 15V, 35A
Total Switching Energy(Ets): 750μJ (on), 680μJ (off)
Turn-on and Turn-off delay time: 16ns/95ns
Testing Conditions: 600V, 35A, 4.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 051462-APT35GP120B2DQ2G
Product Name IGBTs - Single - APT35GP120B2DQ2G
VCE(on) 3.9 volts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - FGD3245G2 - 871754-FGD3245G2 - Win Source Electronics
Specs
Package Type SOT3
Features Bipolar (BJT) Transistor
View Details
1700V 72A 500W IGBT Transistor - 297-BSM50GB170DN2HOSA1 - ERSAELECTRONICS PTE. LTD.
Specs
TJ 150 C (302 F)
Package Type Tray
Packing Method Tray
View Details
3 suppliers
IGBT - 38302391 - Radwell International
Fuji Electric Corp. of America
View Details
2 suppliers