Manufacturer: Microsemi Corporation
Win Source Part Number: 051461-APT35GN120L2D
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT, Trench Field Stop
Input Type: Standard
Gate Charge: 220nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-264-3, TO-264AA
Maximum Current Collector: 94A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 379W
Pulsed Collector Current: 105A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 35A
Total Switching Energy(Ets): 2.315mJ (off)
Turn-on and Turn-off delay time: 24ns/300ns
Testing Conditions: 800V, 35A, 2.2 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 051461-APT35GN120L2DQ2G | APT35GN120L2DQ2G |
| Product Name | IGBTs - Single - APT35GN120L2DQ2G | IGBT Transistors |
| VCE(on) | 2.1 volts |
