Microsemi Corp. IGBTs - Single - APT35GA90BD15 APT35GA90BD15

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051460-APT35GA90BD15 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 84nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 63A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 290W Pulsed Collector Current: 105A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 18A Total Switching Energy(Ets): 642μJ (on), 382μJ (off) Turn-on and Turn-off delay time: 12ns/104ns Testing Conditions: 600V, 18A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051460-APT35GA90BD15 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 84nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 63A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 290W Pulsed Collector Current: 105A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 18A Total Switching Energy(Ets): 642μJ (on), 382μJ (off) Turn-on and Turn-off delay time: 12ns/104ns Testing Conditions: 600V, 18A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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IGBTs - Single - APT35GA90BD15 - 051460-APT35GA90BD15 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT35GA90BD15
051460-APT35GA90BD15
IGBTs - Single - APT35GA90BD15 051460-APT35GA90BD15
Manufacturer: Microsemi Corporation Win Source Part Number: 051460-APT35GA90BD15 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 84nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 63A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 290W Pulsed Collector Current: 105A Collector-emitter saturation voltage(Max): 3.1V @ 15V, 18A Total Switching Energy(Ets): 642μJ (on), 382μJ (off) Turn-on and Turn-off delay time: 12ns/104ns Testing Conditions: 600V, 18A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051460-APT35GA90BD15
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 84nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 63A
VCEO Maximum Collector-Emitter Breakdown Voltage: 900V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 105A
Collector-emitter saturation voltage(Max): 3.1V @ 15V, 18A
Total Switching Energy(Ets): 642μJ (on), 382μJ (off)
Turn-on and Turn-off delay time: 12ns/104ns
Testing Conditions: 600V, 18A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
IGBT Transistors
APT35GA90BD15
IGBT Transistors APT35GA90BD15
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247

IGBT Transistors FG, IGBT-COMBI, 900V, TO-247

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051460-APT35GA90BD15 APT35GA90BD15
Product Name IGBTs - Single - APT35GA90BD15 IGBT Transistors
VCE(on) 3.1 volts
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