APT30N60SC6 is a 600V, 30A CoolMOS Super Junction MOSFET in a TO-247 package, designed for high-efficiency power conversion applications. It features a maximum drain-source on-state resistance of 0.125Ω, a gate threshold voltage range of 2.5V to 3.5V, and a peak pulsed drain current of 89A. The device supports continuous drain current of 19A at 100°C case temperature and has a single pulse avalanche energy rating of 636mJ. Thermal resistance from junction to case is 0.52°C/W. The part is rated for junction and storage temperatures from -55°C to 150°C and meets avalanche and dv/dt ruggedness requirements. It is qualified to AEC-Q200 standards for automotive reliability and is RoHS compliant.
IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT30N60SC6 |
| Product Name | IGBT Transistors |
