Microsemi Corp. IGBTs - Single - APT30GT60KR APT30GT60KR

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051456-APT30GT60KR Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 145nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Maximum Current Collector: 64A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 30A Total Switching Energy(Ets): 525μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 12ns/225ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051456-APT30GT60KR Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 145nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Maximum Current Collector: 64A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 30A Total Switching Energy(Ets): 525μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 12ns/225ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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IGBTs - Single - APT30GT60KR - 051456-APT30GT60KR - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT30GT60KR
051456-APT30GT60KR
IGBTs - Single - APT30GT60KR 051456-APT30GT60KR
Manufacturer: Microsemi Corporation Win Source Part Number: 051456-APT30GT60KR Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 145nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Maximum Current Collector: 64A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 30A Total Switching Energy(Ets): 525μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 12ns/225ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051456-APT30GT60KR
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 145nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Maximum Current Collector: 64A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 110A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 30A
Total Switching Energy(Ets): 525μJ (on), 600μJ (off)
Turn-on and Turn-off delay time: 12ns/225ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 051456-APT30GT60KR
Product Name IGBTs - Single - APT30GT60KR
VCE(on) 2.5 volts
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