Microsemi Corp. IGBTs - Single - APT30GP60BDQ1 APT30GP60BDQ1

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051453-APT30GP60BDQ1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 90nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 100A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 463W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A Total Switching Energy(Ets): 260μJ (on), 250μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051453-APT30GP60BDQ1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 90nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 100A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 463W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A Total Switching Energy(Ets): 260μJ (on), 250μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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IGBTs - Single - APT30GP60BDQ1 - 051453-APT30GP60BDQ1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT30GP60BDQ1
051453-APT30GP60BDQ1
IGBTs - Single - APT30GP60BDQ1 051453-APT30GP60BDQ1
Manufacturer: Microsemi Corporation Win Source Part Number: 051453-APT30GP60BDQ1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 90nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 100A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 463W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A Total Switching Energy(Ets): 260μJ (on), 250μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051453-APT30GP60BDQ1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 90nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 100A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 463W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A
Total Switching Energy(Ets): 260μJ (on), 250μJ (off)
Turn-on and Turn-off delay time: 13ns/55ns
Testing Conditions: 400V, 30A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 051453-APT30GP60BDQ1
Product Name IGBTs - Single - APT30GP60BDQ1
VCE(on) 2.7 volts
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