Microsemi Corp. IGBTs - Single - APT25GP90BDQ1G APT25GP90BDQ1G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051447-APT25GP90BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 72A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 417W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 25A Total Switching Energy(Ets): 370μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 600V, 40A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051447-APT25GP90BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 72A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 417W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 25A Total Switching Energy(Ets): 370μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 600V, 40A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 1
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IGBTs - Single - APT25GP90BDQ1G - 051447-APT25GP90BDQ1G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT25GP90BDQ1G
051447-APT25GP90BDQ1G
IGBTs - Single - APT25GP90BDQ1G 051447-APT25GP90BDQ1G
Manufacturer: Microsemi Corporation Win Source Part Number: 051447-APT25GP90BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 72A VCEO Maximum Collector-Emitter Breakdown Voltage: 900V Maximum Power Dissipation: 417W Pulsed Collector Current: 110A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 25A Total Switching Energy(Ets): 370μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 600V, 40A, 4.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051447-APT25GP90BDQ1G
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 110nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 72A
VCEO Maximum Collector-Emitter Breakdown Voltage: 900V
Maximum Power Dissipation: 417W
Pulsed Collector Current: 110A
Collector-emitter saturation voltage(Max): 3.9V @ 15V, 25A
Total Switching Energy(Ets): 370μJ (off)
Turn-on and Turn-off delay time: 13ns/55ns
Testing Conditions: 600V, 40A, 4.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
IGBT Transistors
APT25GP90BDQ1G
IGBT Transistors APT25GP90BDQ1G
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247, RoHS

IGBT Transistors FG, IGBT-COMBI, 900V, TO-247, RoHS

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051447-APT25GP90BDQ1G APT25GP90BDQ1G
Product Name IGBTs - Single - APT25GP90BDQ1G IGBT Transistors
VCE(on) 3.9 volts
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