Manufacturer: Microsemi Corporation
Win Source Part Number: 051446-APT25GP120BDQ
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 110nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 69A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 417W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 3.9V @ 15V, 25A
Total Switching Energy(Ets): 500μJ (on), 440μJ (off)
Turn-on and Turn-off delay time: 12ns/70ns
Testing Conditions: 600V, 25A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 051446-APT25GP120BDQ1G | APT25GP120BDQ1G |
| Product Name | IGBTs - Single - APT25GP120BDQ1G | IGBT Transistors |
| VCE(on) | 3.9 volts |
