Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120B2 APT22F120B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146682-APT22F120B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Family Name: APT22F120B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8370pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SCT10N120; IXFK20N120SN; IXFK20N120; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146682-APT22F120B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Family Name: APT22F120B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8370pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SCT10N120; IXFK20N120SN; IXFK20N120; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120B2 - 1146682-APT22F120B2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120B2
1146682-APT22F120B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120B2 1146682-APT22F120B2
Manufacturer: Microsemi Corporation Win Source Part Number: 1146682-APT22F120B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Family Name: APT22F120B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8370pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SCT10N120; IXFK20N120SN; IXFK20N120; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146682-APT22F120B2
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Family Name: APT22F120B2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8370pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1040W (Tc)
Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): SCT10N120; IXFK20N120SN; IXFK20N120;
Introduction Date: January 05, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1146682-APT22F120B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120B2
Package Type TO-247; SOT3
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1219621 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT323; Sot-323 (sc-70)
View Details
Single FETs, MOSFETs - 448-AIMZH120R020M1TXKSA1-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details
2 suppliers
5A 800V Bipolar Transistor - 283-2SC3551 - ERSAELECTRONICS PTE. LTD.
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details
2 suppliers
50 V, 200 mA NPN general-purpose transistors - 2PD601BSL-QR - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details