Microsemi Corp. N-Channel 56A 600V TO-220 IGBT Transistor APT15GP60KG

Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Product overview: APT15GP60KG from Microsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 56A, 600V, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 56A, 600V, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT15GP60KG can be used for catalog matching and distributor lookup.

Manufacturer: Microsemi Corporation
Win Source Part Number: 1017974-APT15GP60KG
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 55nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Maximum Current Collector: 56A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 65A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A
Total Switching Energy(Ets): 130μJ (on), 121μJ (off)
Turn-on and Turn-off delay time: 8ns/29ns
Testing Conditions: 400V, 15A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance