Microsemi Corp. IGBTs - Single - APT15GP60BDQ1G APT15GP60BDQ1G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051436-APT15GP60BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 56A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 65A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A Total Switching Energy(Ets): 130μJ (on), 120μJ (off) Turn-on and Turn-off delay time: 8ns/29ns Testing Conditions: 400V, 15A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051436-APT15GP60BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 56A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 65A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A Total Switching Energy(Ets): 130μJ (on), 120μJ (off) Turn-on and Turn-off delay time: 8ns/29ns Testing Conditions: 400V, 15A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1
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IGBTs - Single - APT15GP60BDQ1G - 051436-APT15GP60BDQ1G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT15GP60BDQ1G
051436-APT15GP60BDQ1G
IGBTs - Single - APT15GP60BDQ1G 051436-APT15GP60BDQ1G
Manufacturer: Microsemi Corporation Win Source Part Number: 051436-APT15GP60BDQ1 G Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 56A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 65A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A Total Switching Energy(Ets): 130μJ (on), 120μJ (off) Turn-on and Turn-off delay time: 8ns/29ns Testing Conditions: 400V, 15A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051436-APT15GP60BDQ1G
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 55nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 56A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 65A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A
Total Switching Energy(Ets): 130μJ (on), 120μJ (off)
Turn-on and Turn-off delay time: 8ns/29ns
Testing Conditions: 400V, 15A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
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APT15GP60BDQ1G
IGBT Transistors APT15GP60BDQ1G
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS

IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051436-APT15GP60BDQ1G APT15GP60BDQ1G
Product Name IGBTs - Single - APT15GP60BDQ1G IGBT Transistors
VCE(on) 2.7 volts
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