The APT15GN120SDQ1G is an IGBT with an integrated ultrafast soft recovery anti-parallel diode, designed for low-frequency applications such as welding, solar inverters, and motor drives. It is packaged in a TO-247 case with a maximum collector-emitter voltage of 1200V and a continuous collector current of 45A at 25°C. The device features a trench gate structure with a typical collector-emitter on-voltage of 1.7V at 15A and 25°C. Junction-to-case thermal resistance is 0.64°C/W for the IGBT and 1.18°C/W for the diode. The part is RoHS compliant and meets the AEC-Q200 qualification standard. The maximum operating and storage junction temperature range is from -55°C to 150°C.
IGBT Transistors FG, IGBT, 1200V, TO-268, RoHS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT15GN120SDQ1G |
| Product Name | IGBT Transistors |
