Microsemi Corp. IGBTs - Single - APT13GP120BG APT13GP120BG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051432-APT13GP120BG Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 41A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 250W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 13A Total Switching Energy(Ets): 115μJ (on), 165μJ (off) Turn-on and Turn-off delay time: 9ns/28ns Testing Conditions: 600V, 13A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051432-APT13GP120BG Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 41A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 250W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 13A Total Switching Energy(Ets): 115μJ (on), 165μJ (off) Turn-on and Turn-off delay time: 9ns/28ns Testing Conditions: 600V, 13A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1
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IGBTs - Single - APT13GP120BG - 051432-APT13GP120BG - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT13GP120BG
051432-APT13GP120BG
IGBTs - Single - APT13GP120BG 051432-APT13GP120BG
Manufacturer: Microsemi Corporation Win Source Part Number: 051432-APT13GP120BG Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 41A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 250W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 3.9V @ 15V, 13A Total Switching Energy(Ets): 115μJ (on), 165μJ (off) Turn-on and Turn-off delay time: 9ns/28ns Testing Conditions: 600V, 13A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051432-APT13GP120BG
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 55nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 41A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 3.9V @ 15V, 13A
Total Switching Energy(Ets): 115μJ (on), 165μJ (off)
Turn-on and Turn-off delay time: 9ns/28ns
Testing Conditions: 600V, 13A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
IGBT Transistors
APT13GP120BG
IGBT Transistors APT13GP120BG
IGBT Transistors FG, IGBT, 1200V, 13A, TO-247, RoHS

IGBT Transistors FG, IGBT, 1200V, 13A, TO-247, RoHS

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 051432-APT13GP120BG APT13GP120BG
Product Name IGBTs - Single - APT13GP120BG IGBT Transistors
VCE(on) 3.9 volts
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