Microsemi Corp. IGBT Transistors APT13GP120BDQ1G

Description
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
Description
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
Datasheet
Datasheet Summary
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The APT13GP120BDQ1G is a 1200 V POWER MOS 7® IGBT in a TO-247 package, designed for high-frequency switching applications such as switchmode power supplies. It has a continuous collector current rating of 41 A at 25 °C and 20 A at 110 °C, with a pulsed collector current of 50 A. The device features a maximum power dissipation of 250 W and operates over a junction temperature range of -55 °C to 150 °C. Typical collector-emitter on-voltage is 3.3 V at 13 A and 25 °C, with a total gate charge of 55 nC. The reverse bias safe operating area is rated at 50 A at 960 V and 150 °C. The package weighs 5.9 gm and is RoHS compliant with a lead-free terminal finish. Junction-to-case thermal resistance is 0.50 °C/W for the IGBT.

Datasheet Summary
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The APT13GP120BDQ1G is a 1200 V POWER MOS 7® IGBT in a TO-247 package, designed for high-frequency switching applications such as switchmode power supplies. It has a continuous collector current rating of 41 A at 25 °C and 20 A at 110 °C, with a pulsed collector current of 50 A. The device features a maximum power dissipation of 250 W and operates over a junction temperature range of -55 °C to 150 °C. Typical collector-emitter on-voltage is 3.3 V at 13 A and 25 °C, with a total gate charge of 55 nC. The reverse bias safe operating area is rated at 50 A at 960 V and 150 °C. The package weighs 5.9 gm and is RoHS compliant with a lead-free terminal finish. Junction-to-case thermal resistance is 0.50 °C/W for the IGBT.

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Sheung Wan, Hong Kong
IGBT Transistors
APT13GP120BDQ1G
IGBT Transistors APT13GP120BDQ1G
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS

IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APT13GP120BDQ1G
Product Name IGBT Transistors
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