Manufacturer: Microsemi Corporation
Win Source Part Number: 051430-APT11GF120KRG
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 65nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Maximum Current Collector: 25A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 156W
Pulsed Collector Current: 44A
Collector-emitter saturation voltage(Max): 3V @ 15V, 8A
Total Switching Energy(Ets): 300μJ (on), 285μJ (off)
Turn-on and Turn-off delay time: 7ns/100ns
Testing Conditions: 800V, 8A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
IGBT 1200V 25A 156W TO220
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 051430-APT11GF120KRG | APT11GF120KRG |
| Product Name | IGBTs - Single - APT11GF120KRG | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 3 volts |
