Microsemi Corp. IGBTs - Single - APT11GF120BRDQ1 APT11GF120BRDQ1

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051429-APT11GF120BRD Q1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 65nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 156W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 3V @ 15V, 8A Total Switching Energy(Ets): 300μJ (on), 285μJ (off) Turn-on and Turn-off delay time: 7ns/100ns Testing Conditions: 800V, 8A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
  • IGBTs - Single - APT11GF120BRDQ1 - 051429-APT11GF120BRDQ1 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051429-APT11GF120BRD Q1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 65nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 156W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 3V @ 15V, 8A Total Switching Energy(Ets): 300μJ (on), 285μJ (off) Turn-on and Turn-off delay time: 7ns/100ns Testing Conditions: 800V, 8A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - APT11GF120BRDQ1 - 051429-APT11GF120BRDQ1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT11GF120BRDQ1
051429-APT11GF120BRDQ1
IGBTs - Single - APT11GF120BRDQ1 051429-APT11GF120BRDQ1
Manufacturer: Microsemi Corporation Win Source Part Number: 051429-APT11GF120BRD Q1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 65nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 156W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 3V @ 15V, 8A Total Switching Energy(Ets): 300μJ (on), 285μJ (off) Turn-on and Turn-off delay time: 7ns/100ns Testing Conditions: 800V, 8A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051429-APT11GF120BRDQ1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 65nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Maximum Current Collector: 25A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 156W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 3V @ 15V, 8A
Total Switching Energy(Ets): 300μJ (on), 285μJ (off)
Turn-on and Turn-off delay time: 7ns/100ns
Testing Conditions: 800V, 8A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 051429-APT11GF120BRDQ1
Product Name IGBTs - Single - APT11GF120BRDQ1
VCE(on) 3 volts
Unlock Full Specs
to access all available technical data