Microsemi Corp. IGBTs - Single - APT102GA60L APT102GA60L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146588-APT102GA60L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 780W IGBT Type: PT Current - Collector Pulsed (Icm): 307A Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Family Name: APT102GA60L Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 183A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 62A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146588-APT102GA60L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 780W IGBT Type: PT Current - Collector Pulsed (Icm): 307A Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Family Name: APT102GA60L Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 183A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 62A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

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Product
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IGBTs - Single - APT102GA60L - 1146588-APT102GA60L - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT102GA60L
1146588-APT102GA60L
IGBTs - Single - APT102GA60L 1146588-APT102GA60L
Manufacturer: Microsemi Corporation Win Source Part Number: 1146588-APT102GA60L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Power - Max: 780W IGBT Type: PT Current - Collector Pulsed (Icm): 307A Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Family Name: APT102GA60L Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Current - Collector (Ic) (Maximum): 183A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 62A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146588-APT102GA60L
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Power - Max: 780W
IGBT Type: PT
Current - Collector Pulsed (Icm): 307A
Switching Energy: 1.354mJ (on), 1.614mJ (off)
Input Type: Standard
Gate Charge: 294nC
Td (on/off) @ 25°C: 28ns/212ns
Test Condition: 400V, 62A, 4.7 Ohm, 15V
Family Name: APT102GA60L
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264 [L]
Current - Collector (Ic) (Maximum): 183A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 62A
Introduction Date: April 30, 2008
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 1146588-APT102GA60L
Product Name IGBTs - Single - APT102GA60L
VCES 600 volts
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