Microsemi Corp. IGBTs - Single - APT102GA60B2 APT102GA60B2

Manufacturer: Microsemi Corporation Win Source Part Number: 1146587-APT102GA60B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Power - Max: 780W IGBT Type: PT Current - Collector Pulsed (Icm): 307A Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Part Status: Obsolete(EOL) Family Name: APT102GA60B2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com Current - Collector (Ic) (Maximum): 183A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.5V @ 15V, 62A Introduction Date: April 30, 2008 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited