Microsemi Corp. N-Channel 27.4A 200V 0.105ohm MOSFET Transistor 2N7225

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Product overview: 2N7225 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 27.4A, 200V, 0.105ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 27.4A, 200V, 0.105ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7225 can be used for catalog matching and distributor lookup.

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124262-2N7225
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-254-3, TO-254AA (Straight Leads)
Power Dissipation (Maximum): 4W, 150W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 27.4A
Rds On (Maximum) at Id, Vgs: 100mOhm at 17A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 115nC at 10V
Gate Source Voltage (Maximum): ±20V