Microsemi Corp. FETs - Single - 2N6849 2N6849

Manufacturer: Microsemi Corporation Win Source Part Number: 1124207-2N6849 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.semelab.co.uk Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 6.5A Rds On (Maximum) at Id, Vgs: 320mOhm at 6.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34.8nC at 10V Gate Source Voltage (Maximum): ±20V