Microsemi Corp. FETs - Single - 2N6796 2N6796

Manufacturer: Microsemi Corporation Win Source Part Number: 1124201-2N6796 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.semelab.co.uk Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 180mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250mA Gate Charge (Qg) (Maximum) at Vgs: 6.34nC at 10V Gate Source Voltage (Maximum): ±20V