Microsemi Corp. FETs - Single - 2N6766 2N6766

Manufacturer: Microsemi Corporation Win Source Part Number: 1124191-2N6766 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-204AE Power Dissipation (Maximum): 4W, 150W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 90mOhm at 30A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 115nC at 10V Gate Source Voltage (Maximum): ±20V