Microsemi Corp. Bipolar Transistors - BJT 2N5665

The 2N5665 is an NPN power silicon switching transistor designed for high-voltage switching applications. It is packaged in a TO-39 (TO-205AD) case and meets MIL-PRF-19500/455 qualification standards. The device has a collector-emitter breakdown voltage of 300 Vdc, a collector-base voltage of 400 Vdc, and a maximum collector current of 5.0 Adc. Power dissipation is rated at 1.2 W at +25°C and 15 W at +100°C. The forward current transfer ratio ranges from 25 to 75 at I_C = 1.0 A and V_CE = 5.0 V. Collector-emitter saturation voltage is 0.4 V at I_C = 3.0 A and I_B = 0.6 A. Switching characteristics include a maximum turn-off time of 2.0 μs under specified test conditions. Operating and storage junction temperature ranges from -65°C to +200°C.