Microsemi Corp. JFETs (Junction Field Effect) - 2N3823 2N3823

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123795-2N3823 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microelectr.com. hk Manufacturer Package: TO-206AF, TO-72-4 Metal Can Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 300mW Vds - Drain-Source Breakdown Voltage: 30V Input Capacitance (Ciss) (Maximum) at Vds: 6pF at 15V Current - Drain (Idss) at Vds (Vgs=0): 20mA at 15V Voltage - Cutoff (VGS off) at Id: 8V at 500pA
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123795-2N3823 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microelectr.com. hk Manufacturer Package: TO-206AF, TO-72-4 Metal Can Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 300mW Vds - Drain-Source Breakdown Voltage: 30V Input Capacitance (Ciss) (Maximum) at Vds: 6pF at 15V Current - Drain (Idss) at Vds (Vgs=0): 20mA at 15V Voltage - Cutoff (VGS off) at Id: 8V at 500pA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
JFETs (Junction Field Effect) - 2N3823 - 1123795-2N3823 - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - 2N3823
1123795-2N3823
JFETs (Junction Field Effect) - 2N3823 1123795-2N3823
Manufacturer: Microsemi Corporation Win Source Part Number: 1123795-2N3823 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microelectr.com. hk Manufacturer Package: TO-206AF, TO-72-4 Metal Can Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 300mW Vds - Drain-Source Breakdown Voltage: 30V Input Capacitance (Ciss) (Maximum) at Vds: 6pF at 15V Current - Drain (Idss) at Vds (Vgs=0): 20mA at 15V Voltage - Cutoff (VGS off) at Id: 8V at 500pA

Manufacturer: Microsemi Corporation
Win Source Part Number: 1123795-2N3823
Packaging: Bulk
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-72
Temperature Range - Operating: -55°C ~ 200°C
Manufacturer Homepage: www.microelectr.com.hk
Manufacturer Package: TO-206AF, TO-72-4 Metal Can
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Maximum Power: 300mW
Vds - Drain-Source Breakdown Voltage: 30V
Input Capacitance (Ciss) (Maximum) at Vds: 6pF at 15V
Current - Drain (Idss) at Vds (Vgs=0): 20mA at 15V
Voltage - Cutoff (VGS off) at Id: 8V at 500pA

Buy Now
Sheung Wan, Hong Kong
JFET JFETs

JFET JFETs

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number 1123795-2N3823 2N3823
Product Name JFETs (Junction Field Effect) - 2N3823 JFET
Polarity N-Channel; N-Channel
Package Type SOT3
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data

Similar Products

Automotive MOSFET - AUIRF7669L2TR - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3 to 5 volts
View Details
7 suppliers
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor - T1G2028536-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-780
Power Gain 19 dB
View Details
2 suppliers