The 2N3637L/TR is a PNP silicon switching transistor in a TO-5 package with a maximum collector-emitter voltage of 175 Vdc and a collector current rating of 1.0 Adc. It has a total power dissipation of 5.0 W at +25°C and operates within a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/357 qualification standards.
Bipolar Transistors - BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N3637L/TR |
| Product Name | Bipolar Transistors - BJT |
